Proton-induced traps in electron multiplying charge-coupled devices

Charge-coupled device (CCD)-based technologies exposed to high-energy radiation are susceptible the formation of stable defects within charge transfer channel that defer signal subsequent pixels and limit lifetime detector. Performance degradation due these depends upon interplay between clock timings used operate properties introduced by irradiation. Characterization both type number post-irradiation makes it possible minimize loss though appropriate selection for a given operating temperature. This technique has potential increase nominal mission lifetimes several years CCD-based instruments is particular significance electron multiplying charge-coupled devices (EMCCDs) photon counting applications where effect traps on low levels expected be most severe. We present study CCDs, specifically EMCCDs irradiated at room temperature proton fluences up including 1.45 × 1010 p + / cm2 (74 MeV). Defects characterized through “single-trap pumping” technique, with clocking schemes designed 2-phase pixel architecture EMCCD. Five dominant trap species thought irradiation, Si-E center, Si-A double single acceptor states silicon divacancy (VV − , VV ), an as yet unidentified defect referred here Si-U center (the “unknown” trap). Energy-level cross-section values presented allow inference landscape range temperatures. While focuses EMCCDs, in more general terms, results interpreted being applicable all CCD types following irradiation can serve foundation future correction optimization techniques.